Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding

Abstract

In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.