Electronics cooling with onboard conformal encapsulation

S. Young, D. Janssen, E. Wenzel, B. Shadakofsky, F. Kulacki
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引用次数: 1

Abstract

A new technology for onboard liquid cooling of high power density electronic devices is introduced via conformal encapsulation of the devices and direct contact liquid cooling. This research effort addresses size, weight and power constraints of onboard application with a CFD-enabled design that delivers a uniform coolant flow over single- and multi-device layouts through a microgap channel. The paradigm shift is the replacement of inefficient remote air cooling and associated high resistance conduction paths with the use of microgap flow boiling with direct coolant contact at the device level. The coolant used in all measurements is Novec™ 7200, and the electronics are emulated with resistance heaters on a 1:1 scale. Thermal performance is demonstrated at power densities on the order of 1 KW/cm3. Parameters investigated include average device temperature, pressure drop, flow field characterization, and overall heat transfer coefficients. For single chip encapsulation, thermal-fluid performance with microgaps of 0.25, 0.5 and 0.75 mm is determined. With low coolant inlet subcooling, two-phase heat transfer is seen at all coolant mass flows. Device temperatures reach 95 °C for power dissipation of 50 - 80 W depending on coolant flow for a gap of 0.5 mm. Inlet subcooling of 25 and 51 °C permits higher power dissipation with nucleate flow boiling on the device surface. For multi-device encapsulation comprising two memory chips arranged symmetrically in line with a larger processor, the best thermal performance is obtained for inlet flow over the processor. For all measurements, the gap between the processor and encapsulation is 0.5 mm, and the gap above the memory chips is 1.0 mm. For inlet coolant flow first over the memory chips, the small chips exceed the 95°C limit when processor power is ~50 W or less. Processor temperature reaches 95 °C at ~80 W over the range of coolant flows tested. For inlet flow first over the processor, memory device temperatures are approximately the same over all levels of processor and memory chip powers. For processor power <; 30 W and an inlet coolant temperature of 25°C, single-phase heat transfer is the dominant cooling mechanism. When processor power is > 40 W, two-phase heat transfer dominates, and a processor power of 120 W is reached within the 95 °C threshold.
电子冷却与板载保形封装
介绍了一种采用保形封装和直接接触式液冷的高功率密度电子器件板载液冷新技术。这项研究工作解决了板载应用的尺寸、重量和功率限制,采用了cfd设计,通过微间隙通道在单器件和多器件布局上提供均匀的冷却剂流。这种模式的转变是将低效的远程空气冷却和相关的高电阻传导路径替换为使用微间隙流沸腾,在设备层面直接接触冷却剂。所有测量中使用的冷却剂都是Novec™7200,电子设备采用1:1比例的电阻加热器进行模拟。在功率密度为1kw /cm3的情况下,热性能得到了验证。研究的参数包括平均设备温度、压降、流场特性和总体传热系数。对于单芯片封装,确定了微间隙为0.25、0.5和0.75 mm时的热流体性能。当冷却剂进口过冷度较低时,在所有冷却剂质量流中都可以看到两相传热。器件温度达到95℃,功耗为50 ~ 80w,取决于冷却剂流量,间隙为0.5 mm。进口过冷25和51°C允许更高的功率耗散与核流沸腾的设备表面。对于由两个存储芯片组成的多器件封装,在一个较大的处理器上对称排列,在处理器上的入口气流获得最佳的热性能。对于所有测量,处理器和封装之间的间隙为0.5 mm,内存芯片上方的间隙为1.0 mm。对于入口冷却液首先流过内存芯片的情况,当处理器功率小于等于50w时,小芯片的温度会超过95℃的限制。在测试的冷却剂流量范围内,处理器温度达到95°C ~80 W。对于首先通过处理器的入口流,存储设备温度在所有级别的处理器和存储芯片功率上大致相同。当处理器功率为40w时,两相传热占主导地位,在95℃的阈值内达到120w的处理器功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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