Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328269

B. Opitz, A. Kohl, J. Kováč, S. Brittner, F. Grunberg, K. Heime, J. Woitok

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Abstract

We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.<>

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不同组成的in /sub x/Ga/sub 1-x/As/ in /sub y/Ga/sub 1-y/As超晶格在InP上的wanier - stark效应

我们报道了含有In/sub x/Ga/sub 1-x/ as /In/sub y/Ga/sub 1-y/ as应变层超晶格的MOVPE生长PIN二极管在77 K和室温下的光电流光谱随偏置电压的变化。观察到明显的激子特征，并首次在该材料体系中发现了Stark梯状结构形成的明确证据。能量吸收边低于但接近1.55 /spl mu/m。在井和势垒中进行应变补偿后，结构的光谱得到了改善

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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