Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators

Abstract

A compact SRAM ring oscillator circuit for local, in-situ, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs).