MCG with EEOS application to forming line power supply

E. Chernykh, V. Fortov, K. V. Gorbachev, E. Nesterov, V. A. Stroganov, I.O. Zolotykh
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Abstract

Inductive storage of energy (IS) with EEOS allows one to charge forming line during about 10/sup -7/ sec therefore providing high electrical strength of insulation as well as small size and weight. In the paper, by means of numerical simulation and physical modeling three schemes of device with primary source energy amplifier-explosive magnetic generator (EMG) are analyzed. The schemes are distinguished by the charging models: a) EMG+dynamic transformer+IS+EEOS, b) EMG+transformer IS(TIS)+EEOS and c) EMG+EEOS+TIS. The basic parameter defining efficiency of the device operation is (/spl radic/L/sub IS/C/sub FL/)//spl tau/ which is the characteristic time of (IS-FL) circuit to time constant of EEOS ratio. The last is practically a single-valued function of effective (by EEOS current action integral) EMG current rise-time. Scheme a) in comparison with scheme c) provides the minimum rise-time of voltage across FL as a capacitor, but boosts it in efficiency of energy transfer, overall dimensions (wire case sizes are bigger than FL ones and have the maximum achievable voltage peak). Scheme b) is an intermediate one by its characteristics. The fulfilled analysis of the given schemes in comparison with the same schemes with a bank of capacitors as a power source, showed a significant advantage of EMG used in a wide range of FL capacitance (up to subnanofarads) at FL energy content of more than 10/sup 2/ J.
具有EEOS的MCG在成型线路电源中的应用
具有EEOS的感应能量存储(IS)允许在大约10/sup -7/秒的时间内对形成线充电,因此提供高绝缘电气强度以及小尺寸和重量。本文采用数值模拟和物理建模的方法,对三种一次源能量放大装置-爆炸磁发生器方案进行了分析。按充电模式区分:a)肌电+动态变压器+IS+EEOS, b)肌电+变压器IS(TIS)+EEOS, c)肌电+EEOS+TIS。定义器件工作效率的基本参数是(/spl径向/L/sub is /C/sub FL/)//spl tau/,它是(is -FL)电路的特征时间与EEOS比的时间常数。最后一个实际上是有效(通过EEOS电流动作积分)肌电电流上升时间的单值函数。方案a)与方案c)相比,方案a)作为电容器提供了电压在FL上的最小上升时间,但提高了能量传递效率,整体尺寸(线壳尺寸比FL大,并且具有可实现的最大电压峰值)。方案b)根据其特性是一种中间方案。与以一组电容器作为电源的相同方案相比,对给定方案的完成分析表明,在FL能量含量超过10/sup / J的情况下,EMG在大范围的FL电容(高达亚纳米级)中使用具有显着优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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