An advanced measurement system for verification of models and datasheets

Proceedings of 1994 IEEE Workshop on Computers in Power Electronics Pub Date : 1994-08-07 DOI:10.1109/CIPE.1994.396715

S. Munk‐Nielsen, F. Blaabjerg, J. Pedersen

{"title":"An advanced measurement system for verification of models and datasheets","authors":"S. Munk‐Nielsen, F. Blaabjerg, J. Pedersen","doi":"10.1109/CIPE.1994.396715","DOIUrl":null,"url":null,"abstract":"This paper describes an advanced measurement system for power electronic semiconductor devices. The measurement system is both used for characterization of devices and for determination of model-parameters in device models. The hardware in the system is described and can handle 1200 V/300 A. The measurement system has connection to simulation software such as SABER and PSPICE. Different single device measurement circuits are specified as well as different parameters can be extracted from each measurement. A PC controls the instruments and special menu-oriented software is developed. The software structure is described. Measurement examples on IGBT, diode and MCT are shown as well as extended measurements are presented like switching losses for different load currents. Finally, an example of a parameter extraction for a diode model is done where simulations in SABER and measurements are compared. It is concluded simulations and measurements agree well and the measurement system is a strong tool for further investigation of power semiconductor devices.<<ETX>>","PeriodicalId":123138,"journal":{"name":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1994.396715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

Abstract

This paper describes an advanced measurement system for power electronic semiconductor devices. The measurement system is both used for characterization of devices and for determination of model-parameters in device models. The hardware in the system is described and can handle 1200 V/300 A. The measurement system has connection to simulation software such as SABER and PSPICE. Different single device measurement circuits are specified as well as different parameters can be extracted from each measurement. A PC controls the instruments and special menu-oriented software is developed. The software structure is described. Measurement examples on IGBT, diode and MCT are shown as well as extended measurements are presented like switching losses for different load currents. Finally, an example of a parameter extraction for a diode model is done where simulations in SABER and measurements are compared. It is concluded simulations and measurements agree well and the measurement system is a strong tool for further investigation of power semiconductor devices.<>

查看原文本刊更多论文

用于验证模型和数据表的先进测量系统

本文介绍了一种先进的电力电子半导体器件测量系统。该测量系统既可用于器件的表征，也可用于确定器件模型中的模型参数。介绍了该系统的硬件组成，可处理1200v / 300a电压。该测量系统可与SABER、PSPICE等仿真软件连接。指定了不同的单器件测量电路，并且可以从每次测量中提取不同的参数。用PC机控制仪器，并开发了专用的菜单导向软件。介绍了软件结构。给出了IGBT、二极管和MCT的测量实例，并对不同负载电流下的开关损耗进行了扩展测量。最后，给出了一个二极管模型参数提取的实例，并对SABER仿真和测量结果进行了比较。仿真结果与实测结果吻合良好，为进一步研究功率半导体器件提供了有力的工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of 1994 IEEE Workshop on Computers in Power Electronics

自引率

0.00%

发文量