Thin ZnO layer for RRAM Applications

Abstract

Resistive Random-Access Memory (RRAM) is considered for next generation non-volatile memory application. RRAM has fascinated researchers due to its simple structure, lower switching voltages, high density, fast switching speeds and feasible integration into CMOS processing. Transition-Metal-Oxides have been shown to be brilliant materials for RRAM applications. Among them ZnO is one the most promising materials owing to its being fab-friendly feature, having dielectric constant (k=10). A thin film of ZnO was deposited on ITO coated glass substrate by RF sputtering using radio frequency of 13.5 Mhz and Ar as carrier gas where the substrate to target distance is 7cm and Substrate rotation is 10 rpm. The RF power is 100W. The deposition rate is 0.2-0.3 A°/S. Thickness of the ZnO film was determined to be 100 nm by Rutherford backscattering using 2 MeV alpha particles from Pelletron accelerator. The I-V characteristics of the above sample was performed by using probe station (two probe mode) with pressure contact made of W metal using Keithley 6517b electrometer at IUAC, Delhi. The I-V characteristics showed a hysteresis behaviour.