Study on the influence of pressure on the characteristics of IGBT

Abstract

In order to achieve good electrical connection, a certain mechanical pressure needs to be applied during the use of Press-Pack IGBT devices. Due to the influence of mechanical pressure, the characteristics of IGBT chips will change compared with conventional welded IGBT devices. Therefore, this paper analyzes the semiconductor physical mechanism, and studies the influence of mechanical stress on the electrical characteristics of IGBT chip by using 2D finite element simulation method and experiment. The simulated and experimental results showed that the saturation voltage and fall time of IGBT chips change obviously when the mechanical stress increases, but the change of threshold voltage can be ignored.