A two-dimensional electrostatic potential model for total dose ionization effects in FOI FinFETs

Abstract

The electrostatic potential model of Silicon-on-Insulator (SOI) FinFETs is modified for total dose ionization (TID) effects in Fin-on-Insulator (FOI) FinFETs. The adapted model includes the effects of oxide trapped charges (Not) and interface traps (Nit) on the potential distributions in both gate oxide and buried oxide layers (BOX) respectively. TCAD simulations validate it. It is also experimentally demonstrated that the updated model can be employed to predict threshold voltage and its shift ΔVTH induced by various TID irradiations.