In-Flight Demonstration of Enhanced-Low-Dose-Rate-Sensitivity (ELDRS) in Bipolar Junction Transistors

Abstract

Data on bipolar junction transistors (BJTs) acquired from an in-flight mission experiment are recorded and downloaded for analysis. These data are analyzed for the purpose of characterizing the effects of low dose rate space irradiation on BJTs using a simulated PNP model that has been shown to accurately represent real-life effects of temperature on base current degradation. Results are compared to ground-based tests and show similar trends to LDR ground-based tests. These results will be used for validating recommended hardness assurance test methods for Enhanced-Low-Dose-Rate-Sensitivity (ELDRS) in the space environments and to gain insight into ELDRS mechanisms and the effects of the complex real space environment on BJTs.