Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping

Chen Gao, Yuehua Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong
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Abstract

A 4500 V fast recovery diode (FRD) implanted from cathode with different depths using 1-D varied doping is investigated with SRIM, MATLAB and Sentaurus TCAD in this paper. The defect concentrations of FRDs caused by He ions implantation[1-4] from cathode with 100μm and 120 μm injection depths are defined with SRIM. Especially, the minimum value of minority carriers life time of 100 μm injection depth is outside the space charge region, whereas that of 120 μm injection depth is inside the space charge region. Then the corresponding lifetime profiles of both types of FRDs are calculated with MATLAB for simulation in the Sentaurus TCAD. The electrical parameters of the FRD with 100 μm injection depth, such as forward voltage drop, breakdown voltage, and reverse recovery characteristics, exhibit superior improvements than that of conventional 120 μm one. This phenomenon demonstrates that controlling the minimum lifetime of a minority carriers outside the space charge region will make the device have better performance, which provides a guidance for future diode research.
从不同深度阴极注入4500 V FRD的一维变化掺杂研究
本文利用SRIM、MATLAB和Sentaurus TCAD等软件研究了从不同深度的阴极注入1-D不同掺杂的4500v快速恢复二极管(FRD)。用SRIM测定了注入深度为100μm和120 μm的阴极注入He离子[1-4]引起的frd缺陷浓度。特别是注入深度为100 μm时,少数载流子寿命最小值在空间荷电区外,而注入深度为120 μm时,少数载流子寿命最小值在空间荷电区内。然后用MATLAB计算了两种frd的寿命曲线,并在Sentaurus TCAD中进行了仿真。注入深度为100 μm的FRD的正向压降、击穿电压、反向恢复特性等电气参数均比注入深度为120 μm的FRD有明显改善。这一现象表明,控制空间电荷区以外少数载流子的最小寿命将使器件具有更好的性能,为今后二极管的研究提供指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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