Quantitative investigation of reactions in copper-indium-gallium multilayer thin films

K. A. Lindahl, D. Olson, J. J. Moore, A. Swartzlander, R. Noufi
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引用次数: 2

Abstract

Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se/sub 2/ (CIGS) photovoltaic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phase formation sequences were predicted by application of the effective heat of formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES) has been used to explore segregation within the film.
铜铟镓多层薄膜中反应的定量研究
对Cu- in、Cu-Ga和Cu- in -Ga多层薄膜进行了分析,以了解与Cu(in,Ga)Se/sub 2/ (CIGS)光伏太阳能电池生产相关的薄膜相变。例如,在前驱体薄膜的硒化过程中存在的金属间相将影响薄膜的微观结构并影响所得的性能。本研究应用有效生成热模型对相形成序列进行了预测。这些预测的准确性随后通过实验进行了验证。利用差示扫描量热法(DSC)研究了产物成膜的反应动力学。用x射线衍射(XRD)测定了反应物和产物的物相。俄歇电子能谱(AES)已被用于探索膜内的偏析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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