A Compact 500-mW Ku-band Power Amplifier MMIC in 3×3-mm2 Quad Flat (QFN) Packages

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282794

A. Bessemoulin, Y. Suh, D. Richardson, S. Mahon, J. Harvey

引用次数: 11

Abstract

This paper presents the performance of a 0.5-Watt Ku-band power amplifier MMIC in low cost surface mount quad flat non-leaded packages (QFN). Depending on the technology used (molded or air-cavity QFN packages), the packaged 2-stage amplifier exhibits high-gain ranging from 18- to 20 dB at Ku-band, with more than 27-dBm (500-mW) CW output power, and up to 29-dBm in saturation (800 mW) at 13.75-14.5 GHz. With a die area of only 1.5 mm2 and QFN packages being 3 mm × 3 mm, these results represents the highest output power levels reported to date for amplifier MMICs packaged in the smallest outline

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采用3×3-mm2四平面(QFN)封装的紧凑型500 mw ku波段功率放大器MMIC

本文介绍了一种低成本表面贴装四平面无铅封装(QFN)的0.5瓦ku波段功率放大器MMIC的性能。根据所使用的技术(模压或空腔QFN封装)，封装的2级放大器在ku波段具有18至20 dB的高增益，连续波输出功率超过27-dBm (500-mW)， 13.75-14.5 GHz时饱和输出功率高达29-dBm (800 mW)。由于芯片面积仅为1.5 mm2, QFN封装为3mm × 3mm，这些结果代表了迄今为止报道的以最小外形封装的放大器mmic的最高输出功率水平

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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