A low power high performance PLL with temperature compensated VCO in 65nm CMOS

V. Ravinuthula, S. Finocchiaro
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引用次数: 14

Abstract

This paper presents a fully integrated, low power, low noise Phase-Locked Loop (PLL) implementing a temperature compensated class-C dual-core Voltage Controlled Oscillator (VCO) achieving state of the art phase noise performance. The PLL exhibits low integrated noise enabling the integration of low jitter clocks for high performance data converters supporting GSM requirements for Wireless Infrastructure applications. Implemented in 65 nm CMOS process, the 8 GHz VCO achieves Phase Noise of -140 dBc/Hz at 1 MHz offset measured at 2 GHz output. The PLL exhibits -60 dBc rms noise integrated from 10 kHz to 20 MHz, while maintaining lock for the ambient temperature range -40°C to 105°C, and dissipating ≈ 140 mW.
一种低功耗高性能锁相环,带65nm CMOS温度补偿压控振荡器
本文提出了一种完全集成、低功耗、低噪声的锁相环(PLL),实现了温度补偿的c类双核压控振荡器(VCO),实现了最先进的相位噪声性能。锁相环具有低集成噪声,能够集成低抖动时钟,用于支持无线基础设施应用的GSM要求的高性能数据转换器。采用65nm CMOS工艺实现的8ghz VCO在2ghz输出测量的1mhz偏置下实现了-140 dBc/Hz的相位噪声。该锁相环在10 kHz至20 MHz范围内具有-60 dBc rms的噪声,同时在-40°C至105°C的环境温度范围内保持锁定,功耗≈140 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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