A semi-analytical substrate current model of N-channel MOSFETs operating at 77 K and 300 K

Abstract

In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation.