Germanium on Silicon Photodiodes for Back-End-Of-Line Photonic Integration

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141912

S. Marzen, E. Postelnicu, K. Wada, J. Michel, L. Kimerling

引用次数: 0

Abstract

Ge-on-Si p-i-n photodiodes with graded boron doping were grown and annealed at low temperatures. Annealing improved diode characteristics, with the highest performing diode annealed at 500°C for 3hr, Responsivity = 0.15 A/W and Jd = 170 µA/cm2at λ=1310nm, 0.5µm Ge, and no AR coating.

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用于后端光子集成的锗硅光电二极管

采用梯度硼掺杂制备了Ge-on-Si - p-i-n光电二极管，并进行了低温退火。退火改善了二极管的性能，在500°C下退火3hr，灵敏度= 0.15 A/W, Jd = 170µA/cm2at λ=1310nm, 0.5µm Ge，无AR涂层，二极管性能最高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2023 IEEE Silicon Photonics Conference (SiPhotonics)

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