Design and analysis of tunable analog circuit using double gate MOSFET at 45nm CMOS technology

Abstract

In this paper, we included designing of low power tunable analog circuits using double gate (DG) MOSFET, where the front gate output is changed by control voltage on the back gate. The DG devices can be used to improve the performance and reduce the power dissipation when front gate and back gate both are independently controlled. In this paper, we included the analysis of the analog tunable circuits such as CMOS Amplifier pair, Schmitt Trigger circuit and Operational trans-conductance Amplifier. Gain, phase and output response of analog tunable circuits have been illustrated in the paper. These circuit blocks are used for low-noise high-performance integrated circuits for analog and mixed-signal applications. The simulation results are predicted by Cadence Virtuoso Tool in 45nm complementary metal oxide semiconductor (CMOS) Technology.