A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

2019 IEEE Wireless Power Transfer Conference (WPTC) Pub Date : 2019-06-01 DOI:10.1109/WPTC45513.2019.9055615

Veselin Manev, H. Visser, P. Baltus, Hao Gao

引用次数: 4

Abstract

This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under −10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from −10dBm to − 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.

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隧道二极管与肖特基二极管在2.4 GHz低输入功率区整流器中的比较

本文在−10dBm输入功率范围下，对隧道二极管和肖特基二极管在2.4 GHz整流器中的应用进行了比较。隧道二极管整流器具有量子隧穿效应的优点。因此，它可以实现更高的整流效率。本文采用GI401A隧道二极管和hsm - 285b肖特基二极管。测量输入功率范围为−10dBm ~−40dBm。在相同的拓扑结构、相同的材料和相同的输入功率情况下，基于隧道二极管的整流器的效率为12.6%，而基于肖特基二极管的整流器的效率为6.53%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE Wireless Power Transfer Conference (WPTC)

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