Comparing results from defect-tolerant yield models

C. Thibeault, Y. Savaria
{"title":"Comparing results from defect-tolerant yield models","authors":"C. Thibeault, Y. Savaria","doi":"10.1109/DFTVS.1992.224366","DOIUrl":null,"url":null,"abstract":"To date, many models have been developed to predict the yield of defect-tolerant integrated circuits (ICs). In this paper, results obtained from several of these models are compared. Their sensitivity to various model parameters is also examined. These results lead one to conclude that, despite differences in the predicted amount of redundancy, it may be possible to obtain good solutions. The differences in the solutions come from the models as well as from the parameters used in these models, and solutions are said to be good when the resulting figures of merit are rather insensitive. Consequently, a simple method is proposed to select the number of spares to add in defect-tolerant ICs.<<ETX>>","PeriodicalId":319218,"journal":{"name":"Proceedings 1992 IEEE International Workshop on Defect and Fault Tolerance in VLSI Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1992 IEEE International Workshop on Defect and Fault Tolerance in VLSI Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFTVS.1992.224366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

To date, many models have been developed to predict the yield of defect-tolerant integrated circuits (ICs). In this paper, results obtained from several of these models are compared. Their sensitivity to various model parameters is also examined. These results lead one to conclude that, despite differences in the predicted amount of redundancy, it may be possible to obtain good solutions. The differences in the solutions come from the models as well as from the parameters used in these models, and solutions are said to be good when the resulting figures of merit are rather insensitive. Consequently, a simple method is proposed to select the number of spares to add in defect-tolerant ICs.<>
比较耐缺陷良率模型的结果
迄今为止,已经开发了许多模型来预测耐缺陷集成电路(ic)的成品率。本文对几种模型的计算结果进行了比较。研究了它们对各种模型参数的敏感性。这些结果使人们得出这样的结论:尽管在预测的冗余量上存在差异,但有可能获得好的解决方案。解决方案中的差异来自模型以及这些模型中使用的参数,当所得的价值数字相当不敏感时,解决方案被认为是好的。因此,提出了一种简单的方法来选择在容错集成电路中添加的备件数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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