{"title":"An autozeroing inverter based front-end for resonating sensors","authors":"L. Marchetti, Y. Berg, M. Azadmehr","doi":"10.1109/DTIS.2017.7930154","DOIUrl":null,"url":null,"abstract":"In this paper we propose a new front-end for resonating sensors which is based on a logic inverter working as amplifier. The front-end is compact and auto-zeroing which makes it a good candidate for integration and for low power applications. It has been simulated in AMS-350nm CMOS Technology and a prototype has been fabricated using discrete components on a PCB. The circuit was tested with a BvD load implemented in discrete components, which can be proved to be a good model for a resonant sensor. The components used to implement the BvD load are: Lm = 3mH, Rb = 200Ω, Cs = 560pF, Ce = 3.3nF which leads to a resonant frequency of 140 KHz. The bandwidth of the amplifier is 380kHz and the mid-band gain is 55V/V. The prototype has been tested with a power supply of 5V.","PeriodicalId":328905,"journal":{"name":"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2017.7930154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper we propose a new front-end for resonating sensors which is based on a logic inverter working as amplifier. The front-end is compact and auto-zeroing which makes it a good candidate for integration and for low power applications. It has been simulated in AMS-350nm CMOS Technology and a prototype has been fabricated using discrete components on a PCB. The circuit was tested with a BvD load implemented in discrete components, which can be proved to be a good model for a resonant sensor. The components used to implement the BvD load are: Lm = 3mH, Rb = 200Ω, Cs = 560pF, Ce = 3.3nF which leads to a resonant frequency of 140 KHz. The bandwidth of the amplifier is 380kHz and the mid-band gain is 55V/V. The prototype has been tested with a power supply of 5V.