Analysis of GeSn-SiGeSn hetero-tunnel FETs

S. Sant, Qing-Tai Zhao, D. Buca, S. Mantl, A. Schenk
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引用次数: 8

Abstract

Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content. This feature can be exploited for high-performance tunnel FET (TFET) application. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce the off-state leakage, Silicon-Germanium-Tin (SiGeSn) alloys can be used in the drain region of the TFET. Addition of Si to GeSn increases the band gap of the alloy, thus reducing the ambipolar behavior. Therefore, the GeSn/SiGeSn hetero-structure system is a promising candidate for TFET application. In this work, the performance of GeSn/SiGeSn TFETs is studied by combining the empirical pseudopotential method (EPM) with 2D/3D technology-computer-aided-design (TCAD) simulations of realistic geometries.
gsn - sigesn异质隧道场效应管分析
在IV族半导体合金中,锗锡(GeSn)合金尤其有趣,因为它在一定的Sn含量范围内表现出小而直接的带隙。该特性可用于高性能隧道场效应管(TFET)应用。小的直接带隙提高了带间隧穿率,从而产生了高导通电流。为了减少失态泄漏,硅锗锡(SiGeSn)合金可用于晶体管的漏极区。在GeSn中加入Si增加了合金的带隙,从而降低了双极性行为。因此,GeSn/SiGeSn异质结构体系是一种很有前途的ttfet应用材料。在这项工作中,通过结合经验伪势方法(EPM)和二维/三维技术-计算机辅助设计(TCAD)模拟真实几何形状,研究了GeSn/SiGeSn tfet的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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