{"title":"Distributed PDN Modeling Approach for Accurate Jitter Estimation in High-Speed NAND Flash Memory","authors":"Sayed Mobin, Pranav Balachander, Asha Sharma, Venkatesh Ramachandra","doi":"10.1109/EPEPS53828.2022.9947093","DOIUrl":null,"url":null,"abstract":"Due to aggressive storage capacity demands, multiple NAND Flash die are often stacked in a highly integrated, complex package system. As data-rate increases, bit time (UI) is shrinking, and accurate measurement of the data valid window and jitter become very important. Power distribution network (PDN) noise affects the overall system timing. The conventional way of PDN modeling approach in NAND Flash memory System level analysis, cannot accurately predict the system level jitter and deviates from the actual product level performance. In this paper, an accurate method for PDN-induced jitter analysis in NAND Flash system-level operation is described. Simulated PDN-induced jitter results are validated through characterization system and product level measurement jitter.","PeriodicalId":284818,"journal":{"name":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS53828.2022.9947093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Due to aggressive storage capacity demands, multiple NAND Flash die are often stacked in a highly integrated, complex package system. As data-rate increases, bit time (UI) is shrinking, and accurate measurement of the data valid window and jitter become very important. Power distribution network (PDN) noise affects the overall system timing. The conventional way of PDN modeling approach in NAND Flash memory System level analysis, cannot accurately predict the system level jitter and deviates from the actual product level performance. In this paper, an accurate method for PDN-induced jitter analysis in NAND Flash system-level operation is described. Simulated PDN-induced jitter results are validated through characterization system and product level measurement jitter.
由于对存储容量的巨大需求,多个NAND闪存芯片通常堆叠在一个高度集成的复杂封装系统中。随着数据速率的提高,比特时间(UI)不断缩短,准确测量数据有效窗口和抖动变得非常重要。PDN (Power distribution network)噪声会影响整个系统的时序。传统的PDN建模方法在NAND闪存系统级分析中,不能准确预测系统级抖动,偏离实际产品级性能。本文描述了一种精确分析NAND闪存系统级工作中pdn引起的抖动的方法。通过表征系统和产品级测量抖动验证了模拟pdn引起的抖动结果。