A 88–98 GHz power amplifier in 90 nm CMOS

Abstract

A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.