Thin films of wide band gap II-VI compounds grown by atomic layer epitaxy-properties and application

Abstract

The growth technique atomic layer epitaxy (ALE) has been optimised to produce large area and efficient thin film electroluminescent (TFEL) devices. The author briefly reviews the advantages of the ALE growth technique and its applications. He then describes in more detail various attempts to get a bright multi-colour light emission from wide band gap II-VI semiconductor ALE films, and explains the mechanisms of emission excitation in TFEL structures. Competing approaches to obtain bright blue, green and red electroluminescence are described and analysed.