TCAD Modeling and Data of NOR Nanocrystal Memories

Abstract

This work presents TCAD simulations of NOR NC memories performed with commercial tools, which allow for a good understanding of the impact of the localized charge on both electrostatics and dynamics of the cell. The key role of the position of the trapped charges along the channel length on the threshold voltage shift has been put in evidence. Indeed, this result is critical for NOR discrete-trap memories, where the HE injection is essentially aligned with the drain junction.