Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Abstract

Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<>