Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation

Abstract

The critical device dimensions in advanced SiGe HBTs are extremely small ( 20nm). As a consequence the validity of conventional numerical device models becomes questionable. Therefore the transient modeling accuracy of Drift-Diffusion and Hydrodynamic transport modeling is examined in this paper for an advanced SiGe HBT by means of a Monte-Carlo reference device model. The result shows that the Hydrodynamic Model should be prefered for the engineering design of advanced SiGe HBTs.