GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-01 DOI:10.1109/EDMO.1995.493713

Y. Baeyens, D. Schreurs, B. Nauwelaers, K. van der Zanden, M. Van Hove, W. De Raedt, M. Van Rossum

引用次数: 4

Abstract

This work compares the high-frequency performance of both single and dual-gate GaAs PM and InP LM HEMTs with a gatelength of 0.15 /spl mu/m. Dual-gate cascode HEMTs realised in both technologies show state-of-the-art microwave gain at 10 GHz: 24.2 dB and 27 dB for GaAs PHEMT and InP LM HEMTs respectively. Using dual-gate HEMTs, different coplanar MMIC circuits were designed and successfully realised. Two examples are presented: a GaAs PHEMT distributed amplifier with a gain-bandwidth product of 185 GHz and a small-band one-stage reactively matched amplifier having a gain of more than 20 dB at 23 GHz for both the GaAs and InP-based realisation.

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用于高增益MMIC放大器的GaAs和inp双栅极hemt

本研究比较了栅极长度为0.15 /spl mu/m的单门和双门GaAs PM和InP LM hemt的高频性能。采用这两种技术实现的双栅级联hemt在10 GHz时的微波增益分别为24.2 dB和27 dB。利用双栅hemt，设计并成功实现了不同的共面MMIC电路。给出了两个例子:增益带宽积为185 GHz的GaAs PHEMT分布式放大器和基于GaAs和inp实现的23 GHz增益超过20 dB的小频段单级反应匹配放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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