A 9 GHz Bandwith Preamplifier in 10 Gbps Optical Receiver Using SiGe Base HBT

Abstract

Using an arsenic-implanted polysilicon-emitter/reduced pressure (RP) CVD-grown SiGe-base heterojunction bipolar transistor (HBT), a 9GHz-bandwidth preamplifier in a 10Gbps optical receiver has been developed. The SiGe HBT exhibits a common-emitter current gain (β) of 268, a collector-emitter breakdown voltage (BVCEO) of 3.5V, a cutoff frequency (fT) of 52GHz, and a maximum oscillation frequency (fmax) of 32GHz. For the preamplifier, trans-impedance gain (Z21) is 45dBΩ at a DC supply voltage of 5.5V and a supply current of 14mA.