Exploration of Magnetic RAM Based Memory Hierarchy for Multicore Architecture

S. Senni, L. Torres, G. Sassatelli, Anastasiia Butko, Bruno Mussard
{"title":"Exploration of Magnetic RAM Based Memory Hierarchy for Multicore Architecture","authors":"S. Senni, L. Torres, G. Sassatelli, Anastasiia Butko, Bruno Mussard","doi":"10.1109/ISVLSI.2014.29","DOIUrl":null,"url":null,"abstract":"Today's memory systems mainly integrate SRAM, DRAM and FLASH technologies. SRAM and DRAM are generally used for cache and working memory, while FLASH memory is used for non-volatile storage at low speed. But all are facing to manufacturing constraints in the most advanced node, which compromises further evolution. Besides, with the increasing size of the memory system, a significant portion of the total system power is spent into memories. Magnetic RAM (MRAM) technology is a very attractive alternative offering simultaneously reasonable performance and power consumption efficiency, high density and non-volatility. While MRAM is always under severe investigation to improve manufacturing process, the state of the art shows that this memory technology can be accessed in less than 5ns with a read/write dynamic energy not so far to SRAM dynamic energy. Besides, non-volatility of MRAM can be used for optimizing leakage current thanks to instant on/off policies. This paper demonstrates how current characteristics of MRAM can be used into memory hierarchy of multiprocessor chips (CMPs). The goal is to highlight the interest to use MRAM for cache memory in order to keep overall application performance saving static power.","PeriodicalId":405755,"journal":{"name":"2014 IEEE Computer Society Annual Symposium on VLSI","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2014.29","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

Today's memory systems mainly integrate SRAM, DRAM and FLASH technologies. SRAM and DRAM are generally used for cache and working memory, while FLASH memory is used for non-volatile storage at low speed. But all are facing to manufacturing constraints in the most advanced node, which compromises further evolution. Besides, with the increasing size of the memory system, a significant portion of the total system power is spent into memories. Magnetic RAM (MRAM) technology is a very attractive alternative offering simultaneously reasonable performance and power consumption efficiency, high density and non-volatility. While MRAM is always under severe investigation to improve manufacturing process, the state of the art shows that this memory technology can be accessed in less than 5ns with a read/write dynamic energy not so far to SRAM dynamic energy. Besides, non-volatility of MRAM can be used for optimizing leakage current thanks to instant on/off policies. This paper demonstrates how current characteristics of MRAM can be used into memory hierarchy of multiprocessor chips (CMPs). The goal is to highlight the interest to use MRAM for cache memory in order to keep overall application performance saving static power.
基于磁性RAM的多核存储器层次结构研究
当今的存储系统主要集成了SRAM、DRAM和FLASH技术。SRAM和DRAM一般用于高速缓存和工作存储器,而FLASH存储器用于低速非易失性存储。但所有这些都面临着最先进节点的制造限制,这影响了进一步的发展。此外,随着存储系统的尺寸不断增大,系统总功率的很大一部分都花在了内存上。磁性RAM (MRAM)技术是一个非常有吸引力的替代方案,同时提供合理的性能和功耗效率,高密度和非易失性。虽然MRAM一直受到严格的研究,以改善制造工艺,但目前的技术表明,这种存储技术可以在不到5ns的时间内读取/写入动态能量,而不是SRAM动态能量。此外,MRAM的非挥发性可用于优化泄漏电流,这得益于即时开/关策略。本文阐述了如何将MRAM的电流特性应用到多处理器芯片(cmp)的存储器层次中。我们的目标是强调使用MRAM作为缓存的兴趣,以便保持整体应用程序性能节省静态功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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