Advances in recrystallization technology

Abstract

A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 mu m) on thin SiO/sub 2/ (0.4 mu m) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 mu m) on thick oxide (1-2 mu m) are being fabricated for bipolar applications.<>