Optical Bistability in Thin Silicon Thermo-optical SEEDs at Wavelengths of 1.06 um and 514 nm

Abstract

We present a theoretical analysis and experimental results of thermally induced optical bistability in thin thermooptical silicon SEEDs at 1.06µm and 514nm. The theoretical and experimental results reveal that bistability is due to increasing absorption and thermally induced change of the optical and electrical parameters of the material, largely enhanced by the self-electrooptic effect.