Sangyoon Han, J. Béguelin, Lane Ochikubo, John Jacobs, T. J. Seok, Kyoungsik Yu, N. Quack, Chang-Kyu Kim, R. Muller, Ming C. Wu
{"title":"32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry","authors":"Sangyoon Han, J. Béguelin, Lane Ochikubo, John Jacobs, T. J. Seok, Kyoungsik Yu, N. Quack, Chang-Kyu Kim, R. Muller, Ming C. Wu","doi":"10.1117/1.JOM.1.2.024003","DOIUrl":null,"url":null,"abstract":"Abstract. We report on a 32 × 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 V and the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries.","PeriodicalId":127363,"journal":{"name":"Journal of Optical Microsystems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optical Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/1.JOM.1.2.024003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Abstract. We report on a 32 × 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 V and the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries.