32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

Sangyoon Han, J. Béguelin, Lane Ochikubo, John Jacobs, T. J. Seok, Kyoungsik Yu, N. Quack, Chang-Kyu Kim, R. Muller, Ming C. Wu
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引用次数: 13

Abstract

Abstract. We report on a 32  ×  32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 V and the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries.
32 × 32硅光子MEMS开关与间隙可调定向耦合器在商用CMOS代工厂制造
摘要本文报道了一种具有间隙可调定向耦合器的32 × 32硅光子微机电系统(MEMS)开关。该开关是在商用互补金属氧化物半导体(CMOS)代工厂的200毫米绝缘体上硅晶圆上制造的。该器件的最大片上损耗为7.7 dB,消光比为50.8 dB。开关电压为9.45 V, 20db带宽为28.7 nm。我们的工作显示了在商业CMOS代工厂中大规模生产硅光子MEMS开关的有希望的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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