System level leakage reduction considering the interdependence of temperature and leakage

Lei He, W. Liao, M. Stan
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引用次数: 80

Abstract

The high leakage devices in nanometer technologies as well as the low activity rates in system-on-a-chip (SOC) contribute to the growing significance of leakage power at the system level. We first present system-level leakage-power modeling and characteristics and discuss ways to reduce leakage for caches. Considering the interdependence between leakage power and temperature, we then discuss thermal runaway and dynamic power and thermal management (DPTM) to reduce power and prevent thermal violations. We show that a thermal-independent leakage model may hide actual failures of DPTM. Finally, we present voltage scaling considering DPTM for different packaging options. We show that the optimal Vdd for the hest throughput may be smaller than the largest Vdd allowed by the given packaging platform, and that advanced cooling techniques can improve throughput significantly.
考虑温度和泄漏相互依赖的系统级泄漏降低
纳米技术中的高泄漏器件以及片上系统(SOC)的低活跃率使得泄漏功率在系统级的重要性日益增加。我们首先介绍了系统级泄漏功率建模和特性,并讨论了减少缓存泄漏的方法。考虑到泄漏功率和温度之间的相互依赖性,我们然后讨论了热失控和动态功率和热管理(DPTM),以降低功率和防止热违规。我们证明了一个与热无关的泄漏模型可以隐藏DPTM的实际故障。最后,我们提出了考虑DPTM的不同封装选项的电压缩放。我们表明,最高吞吐量的最佳Vdd可能小于给定封装平台允许的最大Vdd,并且先进的冷却技术可以显着提高吞吐量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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