Modeling The Effects Of Write Field Rise Time On The Recording Properties In Thin Film Media

P. Thayamballi
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引用次数: 26

Abstract

A theory for including the effect of finite write field rise time in the calculation of written transition parameters for thin film media has been developed. Calculated dependence of transition parameter, overwrite and nonlinear transition shifts on the write field rise time are shown. Model results are compared with measured values for a thin film inductive head at different write current rise times and varying disk rotational velocity, for fixed linear density and flying height. The theory has also been used to calculate the amount of precompensation required to reduce the nonlinear shift to near zero.
薄膜介质中写入场上升时间对记录性能影响的建模
本文提出了一种在计算薄膜介质写入跃迁参数时考虑有限写入场上升时间影响的理论。计算了跃迁参数、覆盖和非线性跃迁对写入场上升时间的依赖关系。在线密度和飞行高度固定的情况下,将模型结果与薄膜电感磁头在不同写入电流上升时间和不同磁盘转速下的实测值进行了比较。该理论还被用于计算将非线性位移减小到接近零所需的预补偿量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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