Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application

Abstract

In this work ScA1N film has been used to serve as a barrier in III-Nitride heterojunctions. The reduced lattice mismatch on GaN and better polarization properties of ScxA11-xN makes this material a promising candidate for RF biosensing applications. Therefore, in this work a cantilever type structure has been used to design ScA1N/GaN based biosensor. The maximum drain on sensitivity which has been achieved in this work is 0.421 for keratin. Maximum change of 2V in threshold voltage and 0.00284A drain current has been observed for keratin. The work has been performed on ScAlN/GaN HEMT device using ATLAS technology computer-aided design (TCAD) tool. The sensitivity parameters which have been used to detect the biomolecules are drain current, threshold voltage, transconductance and subthreshold current. Drains on sensitivity and threshold sensitivity of the device have also been evaluated.