Gate-Induced Barrier Field Effect Transistor (GBFET) - A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systems

Abstract

Using two-dimensional simulation, we report a new gate-induced barrier field effect transistor (GBFET) which exhibits at least three orders of magnitude less OFF state leakage current when compared to a conventional poly-Si TFT. We demonstrate that the GBFET is completely free of pseudo-subthreshold conduction making it a very attractive device for active matrix liquid crystal display systems.