Dry etching of bulk 4H-SiC and DLC/SiC structure

Abstract

Summary form only given. We report a parametric investigation of the etching of 4H-SiC bulk wafers and thin diamond like carbon (DLC) layers on the SiC substrates. The 4H-SiC samples were bulk substrates doped with N, and an amorphous DLC layer (/spl sim/500A thick) was deposited on the same SiC substrate by reactive pulse plasma assisted method. The reactive ion etching (RIE) method and fluorine containing plasma (CF/sub 4/) were employed and Ar and O/sub 2/ were used as a gas additive.