Photorefractive Effects in Ferromagnetic Semiconductors with Superlattice Formed by Coherent Light Beams

Abstract

Let us consider a wide-gap donor-type a ferromagnetic semiconductor (FMSC) with mean carrier density nOin the spin wave temperature range placed in an external constant electric field F→O//OZ, magnetic field H→O//F→O and variable weak magnetic field h→/H→O. Its face surface is subjected to several coherent light beams (CLBs), whose frequencies satisfe the inequality ε¯≪ℏω≪ε g (ε g is the energy-gap width). In this case, as a result of the interference phenomena, there appear new regularities in the character of the high-frequency CLB field influence on free carriers and magnons. Thus, for example, the spatial modulation of collision integrals and high-frequency light waves pressure force on electrons leads to the formation of superlattices of the carrier density, electron and magnon temperatures, electric field strength, and magnetization intensity in the system of non-equilibrium electrons and magnons of FMSC.