Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering

Zhuo Chen, N. Ronchi, A. Walke, K. Banerjee, M. Popovici, K. Katcko, G. V. D. Bosch, M. Rosmeulen, V. Afanas’ev, J. V. Houdt
{"title":"Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering","authors":"Zhuo Chen, N. Ronchi, A. Walke, K. Banerjee, M. Popovici, K. Katcko, G. V. D. Bosch, M. Rosmeulen, V. Afanas’ev, J. V. Houdt","doi":"10.1109/IMW56887.2023.10145930","DOIUrl":null,"url":null,"abstract":"We fabricated and characterized IGZO-channel back-gated FeFET. It has been found that a Memory Window (MW) reading scheme based on reverse $I_{d}-V_{g}$ sweep can strongly attenuate the significant read disturb which affects the low- Vt state. This instability of low- $\\mathrm{V}_{\\mathrm{t}}$ state origins from the asymmetric PV loop and small negative coercive voltage. With this optimized reading scheme, we proved that interfacial engineering, by inserting a $\\mathrm{NbO}_{\\mathrm{x}}$ layer between La HZO and IGZO, can significantly improve $2 P_{r}$, MW (to $0.7 \\mathrm{~V}$), and endurance (to 107 cycles). This makes the $\\mathrm{La}: \\mathrm{HZO} / \\mathrm{NbO}_{\\mathrm{x}} / \\mathrm{IGZO}$ FeFET a promising structure for high-endurance and low-latency NVM.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We fabricated and characterized IGZO-channel back-gated FeFET. It has been found that a Memory Window (MW) reading scheme based on reverse $I_{d}-V_{g}$ sweep can strongly attenuate the significant read disturb which affects the low- Vt state. This instability of low- $\mathrm{V}_{\mathrm{t}}$ state origins from the asymmetric PV loop and small negative coercive voltage. With this optimized reading scheme, we proved that interfacial engineering, by inserting a $\mathrm{NbO}_{\mathrm{x}}$ layer between La HZO and IGZO, can significantly improve $2 P_{r}$, MW (to $0.7 \mathrm{~V}$), and endurance (to 107 cycles). This makes the $\mathrm{La}: \mathrm{HZO} / \mathrm{NbO}_{\mathrm{x}} / \mathrm{IGZO}$ FeFET a promising structure for high-endurance and low-latency NVM.
通过读取方案优化和界面工程提高igzo沟道效应场效应管的毫瓦值
我们制作并表征了igzo沟道背控场效应晶体管。研究发现,基于反向$I_{d}- v_ {g}$扫描的记忆窗(Memory Window, MW)读取方案可以有效地减弱影响低Vt状态的显著读干扰。低- $\ mathm {V}_{\ mathm {t}}$状态的不稳定性源于不对称PV回路和小的负矫顽压。通过这种优化的读取方案,我们证明了通过在La HZO和IGZO之间插入$\ mathm {NbO}_{\ mathm {x}}$层的界面工程,可以显著提高$2 P_{r}$、MW(到$0.7 \ mathm {~V}$)和续航(到107次循环)。这使得$\mathrm{La}: \mathrm{HZO} / \mathrm{NbO}_{\mathrm{x}} / \mathrm{IGZO}$ FeFET成为高持久和低延迟NVM的有前途的结构。
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