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Implementation of a Doped Pocket Region in Order to Enhance the Device Performance of MOSFET

Advances in Communication, Devices and Networking Pub Date : 1900-01-01 DOI:10.1007/978-981-13-3450-4_4
P. Saha, Bijoy Goswami
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为了提高MOSFET的器件性能，实现了一个掺杂的口袋区
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Advances in Communication, Devices and Networking
Advances in Communication, Devices and Networking
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