Small signal GaAs MESFET model parameters extracted from measured S-parameters

Abstract

A small signal GaAs FET model is derived based on measured s-parameters. The model parameters have been found using a computer aided optimization program, where the initial value of the circuit elements are determined in part from measured s-parameters at 1 GHz, and in part from DC measurements. By using the optimization program, it is to be noted that the final value of some circuit elements is changed by a negligible amount compared with its initial value. Some other circuit elements which have large changes between their initial and final values, can be readjusted using the second order approximation.