A Study of Conventional and Junctionless MOSFET Using TCAD Simulations

Abstract

As the transistors are scaling down, a conventional MOSFET calls for stringent doping gradients which are quite difficult to achieve. Moreover, the short channel effects become more and more prominent with scaling. Contrary to a conventional MOSFET a junction less transistor is devoid of junctions and its current drive is controlled by the doping concentration instead of the gate capacitance. Though it is quite unorthodox to accept a device sans semiconductor junctions into the family of transistors. A junction less transistor displays very good performance in comparison with a conventional MOSFET especially when the channel is short. Basically, the conduction observed in the junction less transistor is bulk conduction whereas a conventional MOSFET relies on surface conduction. This paper presents simulation of a Junction less Transistor in Silva co and comparison of its performance with that of a conventional MOSFET. The parameters needed for the comparison are to be obtained from the transfer characteristics as well as the output characteristics.