Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer

Abstract

Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 /spl deg/, which agrees with the measurement.