Mechanical Suite of Flexural Bending Method for Electronic Memory Packages

Vance Liu, S. Arifeen, Cassie Bassett, M. Chung, C. Gan, H. Takiar
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引用次数: 2

Abstract

With the advance of memory packaging technology toward small and thin form factor, the die stacking structure and material design of memory packages are getting complex and challenging. In the package compliance perspective, layers inside the package or intrinsic material defects are all subjectable and sensitive to mechanical load effect. The study demonstrates the application of three-point bending (3PB) test onto overall four different types of electronic memory packages to evaluate the mechanical behavior. The test data were analyzed by Weibull-based probabilistic mechanics approach and determined the B10 (Breakage at 10%) value. Finite element method (FEA) was further applied to evaluate the strain gradient geometry between three-point and four-point bending. The result data show that four-point bending method will result in more ideal stress and strain gradient that is less sensitive to package asymmetry. At last, a region of span setting has been simulated to define metrologically as the optimized span region. Due to the confidentiality of the test results, the material properties and detailed package constructional information have not been presented here in the paper.
电子存储封装弯曲弯曲方法的机械套件
随着存储封装技术向小型化、薄型化方向发展,存储封装的芯片堆叠结构和材料设计变得越来越复杂和具有挑战性。从封装顺应性的角度来看,封装内部的层或固有的材料缺陷都受机械载荷效应的影响,并且对其敏感。该研究展示了在四种不同类型的电子存储封装上应用三点弯曲(3PB)测试来评估其力学行为。采用基于威布尔的概率力学方法对试验数据进行分析,确定B10(10%破损)值。采用有限元法对三点弯曲和四点弯曲之间的应变梯度几何进行了分析。结果表明,四点弯曲法得到的应力应变梯度更理想,且对封装不对称的敏感性较低。最后,模拟了一个跨度设置区域,从计量上定义了最优跨度区域。由于测试结果的保密,材料性能和详细的包装结构信息在本文中没有给出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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