Vance Liu, S. Arifeen, Cassie Bassett, M. Chung, C. Gan, H. Takiar
{"title":"Mechanical Suite of Flexural Bending Method for Electronic Memory Packages","authors":"Vance Liu, S. Arifeen, Cassie Bassett, M. Chung, C. Gan, H. Takiar","doi":"10.1109/sennano51750.2021.9642645","DOIUrl":null,"url":null,"abstract":"With the advance of memory packaging technology toward small and thin form factor, the die stacking structure and material design of memory packages are getting complex and challenging. In the package compliance perspective, layers inside the package or intrinsic material defects are all subjectable and sensitive to mechanical load effect. The study demonstrates the application of three-point bending (3PB) test onto overall four different types of electronic memory packages to evaluate the mechanical behavior. The test data were analyzed by Weibull-based probabilistic mechanics approach and determined the B10 (Breakage at 10%) value. Finite element method (FEA) was further applied to evaluate the strain gradient geometry between three-point and four-point bending. The result data show that four-point bending method will result in more ideal stress and strain gradient that is less sensitive to package asymmetry. At last, a region of span setting has been simulated to define metrologically as the optimized span region. Due to the confidentiality of the test results, the material properties and detailed package constructional information have not been presented here in the paper.","PeriodicalId":325031,"journal":{"name":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/sennano51750.2021.9642645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
With the advance of memory packaging technology toward small and thin form factor, the die stacking structure and material design of memory packages are getting complex and challenging. In the package compliance perspective, layers inside the package or intrinsic material defects are all subjectable and sensitive to mechanical load effect. The study demonstrates the application of three-point bending (3PB) test onto overall four different types of electronic memory packages to evaluate the mechanical behavior. The test data were analyzed by Weibull-based probabilistic mechanics approach and determined the B10 (Breakage at 10%) value. Finite element method (FEA) was further applied to evaluate the strain gradient geometry between three-point and four-point bending. The result data show that four-point bending method will result in more ideal stress and strain gradient that is less sensitive to package asymmetry. At last, a region of span setting has been simulated to define metrologically as the optimized span region. Due to the confidentiality of the test results, the material properties and detailed package constructional information have not been presented here in the paper.