Evaluation of fault-tolerant designs implemented on SRAM-based FPGAs

H. Asadi, S. Miremadi, H. Zarandi, A. Ejlali
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引用次数: 19

Abstract

The technology of SRAM-based devices is sensible to single event upsets (SEUs) that may be induced mainly by high energy heavy ions and neutrons. We present a framework for the evaluation of fault-tolerant designs implemented on SRAM-based FPGAs using emulated SEUs. The SEU injection process is performed by inserting emulated SEUs in the device using its configuration bitstream file. An Altera FPGA, i.e. the Flex10K200, and the ITC'99 benchmark circuits are used to experimentally evaluate the method. The results show that between 32 to 45 percent of SEUs injected to the device propagate to the output terminals of the device.
基于sram的fpga的容错设计评估
基于sram的器件技术对主要由高能重离子和中子引起的单事件扰动(seu)很敏感。我们提出了一个框架,用于评估使用模拟seu在基于sram的fpga上实现的容错设计。SEU注入过程是通过使用设备的配置位流文件将模拟的SEU插入设备中来完成的。使用Altera FPGA Flex10K200和ITC’99基准电路对该方法进行了实验评估。结果表明,注入器件的seu中有32%至45%传播到器件的输出端。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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