Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure

2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM) Pub Date : 2017-05-01 DOI:10.1109/ISAF.2017.8000223

L. Wang, S.M. Chen, X. Ning, Z. Chen, J.T. Liu, J.Y. Zhang

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引用次数: 1

Abstract

In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.

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基于AlN/金刚石层状结构的超高频SAW嵌入式纳米换能器

在这项工作中，我们报告了超高频，高性能的纳米数字间换能器(n-IDTs)的开发和实现，用于在氮化铝(AlN)/金刚石/Si衬底上产生表面声波(SAW)，其中金属手指嵌入在AlN薄膜中。利用电子束光刻、电感耦合等离子体(ICP)刻蚀和提离处理，获得了分辨率低至200 nm的n-IDTs。与普通换能器相比，所制备的SAW谐振器在高达9.94 GHz的超高频范围内具有更强的S11峰强度。嵌入式n-IDTs良好的高频特性以及与现有制造技术的兼容性，为在AlN/金刚石/Si衬底上实现高频和高功率应用的先进传感器和单片集成mmic铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)

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