Matrix Codes: Multiple Bit Upsets Tolerant Method for SRAM Memories

C. Argyrides, H. Zarandi, D. Pradhan
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引用次数: 47

Abstract

This paper presents a high level method called Matrix code to protect SRAM-based memories against multiple bit upsets. The proposed method combines hamming code and parity code to assure the reliability of memory in presence of multiple bit-upsets with low area and performance overhead. The method is evaluated using one million multiple-fault injection experiments; next reliability and MTTF of the protected memories are estimated based on fault injection experiments and several equations. The fault detection/correction coverage are also calculated and compared with previous methods i.e., Reed-Muller and hamming code. The results reveal that the proposed method behaves better than these methods in terms of fault detection and correction of multiple faults regarding to the area overhead.
矩阵码:SRAM存储器的多比特容错方法
本文提出了一种称为矩阵码的高级方法来保护基于sram的存储器免受多位扰流的影响。该方法结合了汉明码和奇偶校验码,保证了存储器在多比特干扰情况下的可靠性,并且具有较低的面积和性能开销。通过一百万次多断层注入实验对该方法进行了评价;基于故障注入实验和几个方程估计了保护存储器的下一个可靠性和MTTF。计算了故障检测/校正覆盖率,并与Reed-Muller和hamming方法进行了比较。结果表明,该方法在故障检测和多故障校正方面优于上述方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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