Type-II p-GaAsSb/n-InAs Nanowires under Conditions for Tunnel Junction Formation

Abstract

Type-II GaAsSb/InAs nanowires (NWs) were grown using a position-controlled vapor-liquid-solid method. A change in shape of GaAsSb segments with Sb content was revealed. By controlling the group-V sources, GaAsSb segments that satisfied the criteria of tunnel junctions were achieved, and p-type Zn doping for GaAsSb segments was confirmed in the range of $10^{18}-10^{19} \text{cm}^{-3}$. Moreover, conductive type of p-n NWs was confirmed using the scanning capacitance microscopy technique. These results are promising for the development of NWs suitable for vertical nanoscale tunnel devices.