Process simulation of Trench Gate and Plate and Trench Drain SOI NLIGBT with TCAD tools

Abstract

In this paper process simulation of a novel structural Silicon On Insulator (SOI) LIGBT cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS processes with Silvaco TCAD. The simulated results indicate that the proposed TGFPTD SOI LIGBT cell is feasible to be fabricated in advanced SOI CMOS technologies and the vertical channel length of the vertical gate nMOSFET could be reduced to about 170 nm.